原装正品CONCEPT IGBT drive 2SD315AI-SHENZHEN SDK ELECTRONICS CO.,LTD

CONCEPT IGBT drive

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CONCEPT IGBT drive

原装正品CONCEPT IGBT drive 2SD315AI

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CONCEPT IGBT drive 2SD315AI

2SD315AI

Parameter	Min	Typical	Max	Unit
Nominal supply voltage		15		V
Supply current, without load (Idc+Idd)		42		mA
Supply current, full load Idc+Idd)			490	mA
Output power per channel			3	W
Efficiency of DC/DC converter		85		%
Delay time input to output, turn on		300		ns
Delay time input to output, turn off		350		ns
Switching frequency_{(Note 1)}	0		100	kHz
Duty cycle	0		100	%
Gate voltage (bipolar gate drive)		+/-15		V
Gate voltage (unipolar gate drive)		0/+15		V
Peak output current (gate current)	-15		+15	A
dv/dt immunity, input to output		100		kV/us
Creepage distance		21		mm
Dielectric test voltage			4000	V_AC
Operating temperature	-40		+85	°C

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